DMG4800LSD
30
30
25
V GS = 10V
25
V DS = 5V
V GS = 4.5V
20
15
10
V GS = 3.0V
V GS = 2.5V
20
15
10
T A = 150°C
5
5
T A = 125°C
T A = 85°C
T A = 25°C
0
0
V GS = 2.0V
0.5 1 1.5
2
0
0
0.5
T A = -55°C
1 1.5 2 2.5 3 3.5
4
1
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
0.06
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
0.05
0.04
V GS = 4.5V
0.1
V GS = 2.5V
0.03
0.02
0.01
T A = 150°C
T A = 125°C
T A = 85°C
T A = 25°C
T A = -55°C
0.01
0
V GS = 4.5V
5 10 15 20 25
30
0
0
5
10 15 20
25
30
1.6
1.4
1.2
I D , DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.05
0.04
0.03
I D , DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.0
0.8
0.6
-50
V GS = 4.5V
I D = 10A
V GS = 10V
I D = 11.6A
-25 0 25 50 75 100 125 150
0.02
0.01
0
-50
V GS = 4.5V
I D = 10A
V GS = 10V
I D = 11.6A
-25 0 25 50 75 100 125 150
T A , AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
T A , AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMG4800LSD
Document number: DS31858 Rev. 6 - 2
3 of 6
www.diodes.com
March 2013
? Diodes Incorporated
相关PDF资料
DMG4822SSD-13 MOSFET DL N-CH 30V 10A SO-8
DMG4932LSD-13 MOSFET 2N-CH 30V 9.5A SO8
DMG5802LFX-7 MOSFET N-CH DUAL 24V DFN5020-6
DMG6602SVT-7 MOSFET N/P-CH 30V TSOT23-6
DMG6898LSD-13 MOSFET 2N-CH 20V 9.5A SO8
DMG6968U-7 MOSFET N-CH 20V 6.5A SOT-23
DMG6968UDM-7 MOSFET N-CH 6.5A 20V SOT-26
DMG7401SFG-7 MOSFET P CH 30V 9.8A POWERDI3333
相关代理商/技术参数
DMG4800LSDQ-13 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 31V-40V SO-8 T&R 2.5K - Tape and Reel
DMG4812SSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
DMG4812SSS-13 功能描述:两极晶体管 - BJT MOSFET BVDSS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
DMG4822SSD 制造商:Diodes Incorporated 功能描述:MOSFET NN CH W DIO 30V 10A SO8 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W DIO, 30V, 10A, SO8 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W DIO, 30V, 10A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0134ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.42W ;RoHS Compliant: Yes
DMG4822SSD-13 功能描述:MOSFET MOSFET BVDSS: 31V-40 1V-40V,SO-8,2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4932LSD 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMG4932LSD-13 功能描述:MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG-4A-750 制造商:MERRIMAC 制造商全称:MERRIMAC 功能描述:DOUBLE BALANCED MIXERS